Bottom electrode for MRAM device and method to fabricate it

Details Bottom electrode for MRAM device and method to fabricate it Bottom electrode for MRAM device and method to fabricate it

2006-09-28

2010-11-23

Everhart, Caridad M. (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C216S072000, C216S075000, C438S711000, C257SE21232, C257SE21483, C257SE21231

Reexamination Certificate

active

07838436

ABSTRACT:
Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a layer of ruthenium near the silicon nitride surface. The ruthenium is a good electrical conductor and it responds differently from Ta and TaN to certain etchants. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”. Thus, said included layer of ruthenium may be used as an etch stop layer during the etching of Ta and/or TaN while the latter materials may be used to form a hard mask for etching the ruthenium without significant corrosion of the silicon nitride surface.

REFERENCES:
patent: 6703654 (2004-03-01), Horng et al.
patent: 6960480 (2005-11-01), Horng et al.
patent: 6974708 (2005-12-01), Horng et al.
patent: 7060194 (2006-06-01), Kodaira et al.
patent: 2004/0187304 (2004-09-01), Chen et al.
patent: 2005/0016957 (2005-01-01), Kodaira et al.
patent: 2005/0254293 (2005-11-01), Horng et al.
patent: 2006/0002184 (2006-01-01), Hong et al.
patent: 2006/0038246 (2006-02-01), Maehara et al.
Co-pending U.S. Appl. No. 11/215,276, filed Aug. 30, 2005 “Improved Bottom Conductor for Integrated MRAM,” Horng et al.
S. Tehrani et al., “Magnetoresistive Random Access Memory Using Magnetic Tunnel Junctions”, Proceedings of the IEEE, vol. 91, No. 5, May 2003, pp. 703-712.
“Nanoscale MRAM Elements” (including an extensive review of RIE),—S.J. Pearton and J.R. Childress (IBM and U of F) found: http://mse.ufl.edu/˜spear/recent—papers/NanoscaleMRAM/NanoscaleMRAM.htm Jul. 13, 2005.

Affiliated with

Also associated with

Rating

Bottom electrode for MRAM device and method to fabricate it does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bottom electrode for MRAM device and method to fabricate it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bottom electrode for MRAM device and method to fabricate it will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4209204