4. Static information storage and retrieval
  5. Floating gate
  6. Particular biasing

Paolo Gargini

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EPROM Cell with reduced programming voltage and method of fabric

Static information storage and retrieval – Floating gate – Particular biasing
Patent

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Method of making EPROM cell with reduced programming voltage

Metal treatment – Compositions – Heat treating
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Method of making MOS device by forming self-aligned polysilicon

Metal working – Method of mechanical manufacture – Assembling or joining
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Profile ID: LFUS-PAI-P-932992

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