4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Combined with electrical contact or lead
  6. Of specified configuration

Masayoshi Tagami

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Multi-layered wiring layer and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Multilayered wiring structure, and method for manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate

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Semiconductor device and having trench interconnection

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Semiconductor device and method of manufacturing same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Semiconductor device and method of manufacturing same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2361678

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