Semiconductor device and having trench interconnection

Details Semiconductor device and having trench interconnection Semiconductor device and having trench interconnection

2005-12-23

2009-11-24

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257SE21575, C257SE21641, C257SE21627, C257SE21597

Reexamination Certificate

active

07622808

ABSTRACT:
A semiconductor device includes a first interconnection layer and a interlayer insulating layer. The first interconnection layer is formed on a upper side of a substrate, and includes a first interconnection. The interlayer insulating layer is formed on the first interconnection layer, and includes a via connected with the first interconnection at one end of the via and a second interconnection connected with the via at another end of the via. The interlayer insulating layer has a relative dielectric constant lower than that of a silicon oxide film. An upper portion of the interlayer insulating layer includes a silicon-oxide film, a silicon nitride film and a silicon oxide film in order from a lower portion.

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