Multilayered wiring structure, and method for manufacturing...

Details Multilayered wiring structure, and method for manufacturing... Multilayered wiring structure, and method for manufacturing...

2011-08-16

2011-08-16

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257SE21577, C438S622000

Reexamination Certificate

active

07999391

ABSTRACT:
Provided is a wiring of the Damascene structure for preventing the TDDB withstand voltage degradation and for keeping the planarity to prevent the degradation of a focus margin. A trench wiring (213) is formed in an interlayer insulating film, which is composed of a silicon carbide-nitride film (205), a SiOCH film (206) and a silicon oxide film (207) [(e)]. The silicon oxide film (207) is etched at a portion adjacent to the wiring of a polished surface by dry etching or wet etching [(f)]. A silicon carbide-nitride film (SiCN) (214) is formed as a Cu cap film [(g)]. An interlayer insulating film is further formed thereon to form a conductive plug, a trench wiring and so on.

REFERENCES:
patent: 6730594 (2004-05-01), Noguchi et al.
patent: 7825516 (2010-11-01), Chiras et al.
patent: 2000-294634 (2000-10-01), None
patent: 2005-203476 (2005-07-01), None

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