4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Processes of growth with a subsequent step of heat treating...

Lu Fei

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Epitaxial silicon wafers substantially free of grown-in defects

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...
Reexamination Certificate

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Epitaxial wafer substantially free of grown-in defects

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate

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Single crystal silicon wafer having an epitaxial layer...

Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2013492

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