Metal treatment – Barrier layer stock material – p-n type – With contiguous layer doped to degeneracy
Reexamination Certificate
2006-08-29
2006-08-29
Kunemund, Robert (Department: 1722)
Metal treatment
Barrier layer stock material, p-n type
With contiguous layer doped to degeneracy
C148S033500, C117S003000, C117S013000, C117S020000, C117S035000, C117S932000
Reexamination Certificate
active
07097718
ABSTRACT:
Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated intrinsic point defects on the substrate surface upon which the epitaxial layer is deposited.
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Falster Robert J.
Fei Lu
Holzer Joseph C.
Korb Harold W.
Mule'Stagno Luciano
Kunemund Robert
MEMC Electronic Materials , Inc.
Senniger Powers
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