Method for growing a II-VI compound semiconductor layer containi

Details Method for growing a II-VI compound semiconductor layer containi Method for growing a II-VI compound semiconductor layer containi

1996-09-27

1998-07-14

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Dopant introduction into semiconductor region

438 46, 438930, 438603, H01L 2120

Patent

active

057803226

ABSTRACT:
A method for growing a II-VI compound semiconductor layer containing Cd, such as Zn.sub.1-x Cd.sub.x Se, by a molecular beam epitaxy method is disclosed. During the growth, the ratio of the intensity of molecular beams of a group VI element to the intensity of molecular beams of a group II element in terms of intensities of molecular beams actually irradiated onto a substrate, namely, the substantial VI/II ratio, is controlled preferably in the range from 0.7 to 1.3, to increase the Cd incorporating efficiency into the grown layer sufficiently high.

REFERENCES:
patent: 4743310 (1988-05-01), Kay et al.
patent: 4960728 (1990-10-01), Schaake et al.
patent: 5366927 (1994-11-01), Schetzina
patent: 5398641 (1995-03-01), Shih
T. Yao, "MBE of II-VI Compounds", in The Technology and Physics of Molecular Beam Epitaxy, edited by E.H.C. Parker, Plenum Press, pp. 313-343, Sep. 1985.

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