Manufacturing method for producing silicon carbide crystal...

Details Manufacturing method for producing silicon carbide crystal... Manufacturing method for producing silicon carbide crystal...

2006-09-26

2006-09-26

Mackey, James P. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S086000, C117S951000

Reexamination Certificate

active

07112242

ABSTRACT:
A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.

REFERENCES:
patent: 5288326 (1994-02-01), Maeda et al.
patent: 5683507 (1997-11-01), Barrett et al.
patent: 5704985 (1998-01-01), Kordina et al.
patent: 5707446 (1998-01-01), Volkl et al.
patent: 5879462 (1999-03-01), Kordina et al.
patent: 6030661 (2000-02-01), Kordina et al.
patent: 6039812 (2000-03-01), Ellison et al.
patent: 6048398 (2000-04-01), Vehanen et al.
patent: 6056820 (2000-05-01), Balakrishna et al.
patent: 6063185 (2000-05-01), Hunter
patent: 6406539 (2002-06-01), Shigeto et al.
patent: 6451112 (2002-09-01), Hara et al.
patent: 2001/0052324 (2001-12-01), Rupp et al.
patent: A-H05-214412 (1993-08-01), None
patent: A-11-035395 (1999-02-01), None
patent: WO 00/43577 (2000-07-01), None

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