4. Radiant energy
  5. Ionic separation or analysis
  6. Static field-type ion path-bending selecting means

Katuhiko Tamura

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Semiconductor device having multi-layer film structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Semiconductor device having smooth contact holes formed through

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
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Profile ID: LFUS-PAI-P-770728

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