Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means
Patent
1992-07-16
1993-04-06
Prenty, Mark V.
Radiant energy
Ionic separation or analysis
Static field-type ion path-bending selecting means
257758, 257760, H01L 2348, H01L 2934
Patent
active
052008088
ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device of a multi-layer film structure. A gate electrode having a connection portion is formed on a semiconductor substrate. An underlying silicon oxide film is formed on the semiconductor substrate including the gate electrode. A silicon nitride film is formed on the silicon oxide film. A first opening portion having a larger diameter than that of the connection portion is formed at a portion of the silicon nitride film above the connection portion. An overlying silicon oxide film is formed on the silicon nitride film so as to fill the first opening portion. A second opening portion for exposing the connection portion is formed in the underlying silicon oxide film and in the overlying silicon oxide film. A native oxide film existing on the surface of the exposed connection portion is removed with an aqueous solution of HF. Finally, an aluminum alloy film is deposited to fill the second opening portion and cover the overlying silicon oxide film. According to this method, when the native oxide film is etched away employing the HF aqueous solution, a sidewall of the contact hole recedes more or less, but no eaves-like protrusion of the silicon nitride film is produced on the sidewall of the contact hole. Consequently, the aluminum alloy film is satisfactorily connected to the gate electrode.
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"Magnesium Oxide Emitter Sidewall Etching Stop-Layer", IBM Technical Disclosure Bulletin, vol. 27, No. 12, May 1985, pp. 7159-60.
Koyama Toru
Nagamine Takako
Tamura Katuhiko
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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