4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Specified wide band gap semiconductor material other than...
  6. Diamond or silicon carbide

John Williams Palmour

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Layered dielectric on silicon carbide semiconductor structures

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate

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Nitride based transistors on semi-insulating silicon carbide...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Nitride based transistors on semi-insulating silicon carbide...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate

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Nitride based transistors on semi-insulating silicon carbide...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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Silicon carbide MOSFET having self-aligned gate structure

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent

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Profile ID: LFUS-PAI-P-280807

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