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Günther Obermeier

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Method for the production of an epitaxially grown...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base
Reexamination Certificate

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Semiconductor wafer with crystal lattice defects, and...

Stock material or miscellaneous articles – Circular sheet or circular blank
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2664332

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