4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Schottky barrier
  6. To compound semiconductor

Dri Nadav

Examiner

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Fine protuberance structure and method of production thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Structure and method for manufacturing group III-V composite Sch

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Patent

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Profile ID: LFUS-PAI-P-775050

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