Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Patent
1997-09-30
2000-07-11
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
257475, 257478, 257485, 257486, H01L 27095
Patent
active
060877049
ABSTRACT:
Group III-V composites, which is used to manufacture Schottky contacts having the characteristics of higher energy gap, higher carriers mobility, etc., are applied for manufacturing high-speed devices. Therefore, in there years, Group III-V composite Schottky contacts are continuously being developed. In the invention, the surface treatment of composite semiconductor is used for reduce a surface state and oxidation, thereby increased the Schottky barriers of the Group III-V composite (such as, GaAs, InP, InAs and InSb) Schottky contacts. During experiments, a phosphorus sulphide/ammonia sulphide solution and hydrogen fluoride solution are used for the surface treatment to increase the amount of sulphur contained on the surfaces of substrates, reduce the surface state and remove various oxides. Furthermore, ultra-thin and really stable sulphur fluoride/phosphorus fluoride layers having high energy gaps are formed on various substrates. Then, the sulphur fluoride/phosphorus fluoride layers are sputtered by a single electron gun with metals Ag, Au, Ni and Pt to form Schottky contacts. In addition, a UV ray is performed for enhancing the Schottky contacts. The result shows that event thought the Schottky contacts formed by various Group III-V composites (such as GaAs, InP, InAs and InSb) and various metals are baked for 18 hrs. at a temperature of 300.degree. C., their Schottky barriers can still reach about 1.1 eV, 0.95 eV, 0.37 eV and 0.19 eV, respectively. Therefore, Schottky contacts with high yield can be manufactured according to the invention.
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patent: 5796127 (1998-08-01), Hayafuji et al.
Hwang et al., A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodes, J. A[]l. Phys. 67(4), pp. 2162-2165, Feb. 15, 1990.
"Ruthenium and sulphide passivation of GaAs" published in Applied surface Science 93 (1996) 37-43.
"Electrical Characteristics and Surface Chemistry of P2S5-Passivated GaAs" Published in Jpn. J. Appln. phys. vol. 33 (1994) pp. 3813-3824.
Chang Liann-Be
Wang Hung-Tsung
Nadav Dri
National Science Council
Thomas Tom
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