4. Active solid-state devices (e.g., transistors, solid-state diode
  5. With specified impurity concentration gradient

Carl Huster

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Epitaxial delta doping for retrograde channel profile

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate

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Non-uniform gate doping for reduced overlap capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2106332

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