Semiconductor device having field effect transistors different i

Details Semiconductor device having field effect transistors different i Semiconductor device having field effect transistors different i

1997-02-28

2000-12-26

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, H01L 2976

Patent

active

061664138

ABSTRACT:
An n-channel type field effect transistor and a p-channel type field effect transistor are fabricated on a p-type well and an n-type well, respectively, and the arsenic-doped gate electrode of the n-channel type field effect transistor is thinner than the boron-doped gate electrode of the p-channel type field effect transistor so that the arsenic and the boron are appropriately diffused in the gate electrodes during a rapid annealing.

REFERENCES:
patent: 4931411 (1990-06-01), Tigelaar et al.
patent: 5021354 (1991-06-01), Pfiester
patent: 5468666 (1995-11-01), Chapman
E. Hasegawa et al., "The impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI", IEDM 95, 1995, pp. 327-330, Dec. 1995.

Affiliated with

Also associated with

Rating

Semiconductor device having field effect transistors different i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having field effect transistors different i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having field effect transistors different i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-997861