Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-08-14
2000-04-25
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257345, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
06054743&
ABSTRACT:
A high voltage MOS (Metal Oxide Semiconductor) transistor includes a semiconductor substrate of first conductivity type (P type). A pair of first diffused layers of second conductivity type (N type) are formed on the substrate. A pair of second diffused layers of second conductivity type (N type) are respectively formed in the first diffused layers and have a higher concentration than the first diffused layers. A gate region intervenes between the two first diffused layers facing each other. The gate region consists of a gate oxide film and a gate electrode. The distance between the first diffused layers is smaller in the deep region of the substrate than at the surface of the substrate. The MOS transistor has a great breakdown resisting quantity.
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Cao Phat X.
Chaudhuri Olik
OKI Electric Industry Co., Ltd.
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