Forming halogen doped glass dielectric layer with enhanced stabi

Details Forming halogen doped glass dielectric layer with enhanced stabi Forming halogen doped glass dielectric layer with enhanced stabi

1999-08-11

2000-12-26

Smith, Matthew

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438787, 438778, 438758, 438723, 257632, 257634, 257641, 257645, 257649, H01L 21469

Patent

active

061659150

ABSTRACT:
Within a method for forming a halogen doped glass layer, such as a fluorosilicate glass (FSG) layer, there is first provided a substrate. There is then formed over the substrate a first halogen doped glass layer. There is then formed upon the first halogen doped glass layer a barrier layer. There is then formed upon the barrier layer a second halogen doped glass layer. Finally, there is then planarized the second halogen doped glass layer, while not penetrating the barrier layer, to form a planarized halogen doped glass layer.

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S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 2 Lattice Press, Calif, pp. 199-203, 1986.

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