Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-03-03
2000-12-26
Nelms, David
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438166, 438175, 438486, 438571, H01L 2100, H01L 2120
Patent
active
061658243
ABSTRACT:
A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.
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Nakajima Setsuo
Ohnuma Hideto
Ohtani Hisashi
Takano Tamae
Yamazaki Shunpei
Lebentritt Michael S.
Nelms David
Semiconductor Energy Laboratory Co,. Ltd.
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