Drive transistor for CCD-type image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257344, 257408, 377 60, H01L 29796, H01L 2978, G11C 1928

Patent

active

054770700

ABSTRACT:
A charge-coupled device type image sensor having a floating diffusion-type amplifier including a drive transistor comprising a substrate, a drain region, a source region, a depletion channel region formed between the drain and source regions in contact with the drain region, and a gate electrode formed on the substrate between the source region and the drain region, such that the gate electrode overlays a portion of the source region and overlays a portion of the depletion channel region, wherein the drain region is spaced apart from said gate electrode.

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patent: 5349225 (1994-09-01), Redwine et al.
patent: 5357129 (1994-10-01), Kamimura

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