Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1997-06-04
2000-04-25
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438239, 438253, 438254, 438381, 438397, H01L 2120
Patent
active
060543604
ABSTRACT:
The method of manufacturing a semiconductor memory device with a stacked capacitor is disclosed. The method is featured by forming an insulating film on semiconductor substrate, forming a high melting point metal film interposed between capacitor electrode films, selectively etching the capacitor electrode films to expose at least a part of the high melting point metal film, and removing the high melting point metal film by etching using a solution containing at least one selected from sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, hydrogen peroxide, and ammonia. Thus only the high melting point metal film can be removed without etching the insulating film.
REFERENCES:
patent: 5168073 (1992-12-01), Gonzalez et al.
patent: 5192703 (1993-03-01), Lee et al.
patent: 5834357 (1998-11-01), Kang
Jr. Carl Whitehead
NEC Corporation
Thomas Toniae M.
LandOfFree
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