FET having gate insulating films whose thickness is different de

Details FET having gate insulating films whose thickness is different de FET having gate insulating films whose thickness is different de

1993-11-23

1995-06-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257401, 257411, H01L 2978

Patent

active

054225051

ABSTRACT:
A field effect transistor comprises a first conductive type semiconductor substrate, a second conductive type source region formed on the semiconductor substrate, a second conductive type drain region formed on the semiconductor substrate and non-contacting the source region, and a gate electrode formed on a channel region between the source region and the drain region through a gate insulating film, wherein the thickness of the gate insulating film is thickened at least in a two-step manner in a direction from the source region to the drain region, impurity concentration of the respective channel regions under the gate insulating film having a different film thickness is different, and impurity concentration of the channel region under the thick film portion of the gate insulating film is lower than that of the channel region under the thin film portion of the gate insulating film.

REFERENCES:
patent: 4990983 (1991-02-01), Custode et al.

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