Transistor with integrated poly/metal gate electrode

Details Transistor with integrated poly/metal gate electrode Transistor with integrated poly/metal gate electrode

1998-02-04

2000-09-12

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, H01L 2978

Patent

active

061181633

ABSTRACT:
An integrated circuit transistor and method of making the same are provided. The transistor includes a substrate, first and second source/drain regions, and a gate electrode stack coupled to the substrate. The gate electrode stack is fabricated by forming a first insulating layer on the substrate, forming a first conductor layer on the first insulating layer, and forming a metal layer on the first conductor layer. A second insulating layer, such as an interlevel dielectric layer, is coupled to the substrate adjacent to the gate electrode stack. Sidewall spacers and LDD processing may be incorporated. The transistor and method integrate metal and polysilicon into a self-aligned gate electrode stack.

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patent: 5656519 (1997-08-01), Mogami
Stanley Wolf and Richard N. Tauber, Silicon Processing for the VLSI Era, vol. 2: Process Integration, pp. 144-152, 316-319, 397-398, 1990.
Stanley Wolf and Richard N Tauber, Silicon Processing for the VLSI Era, vol. 3: The Submicron MOSFET, pp. 641, 1995.

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