Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-10-28

2000-09-12

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257514, 257544, 438151, 438224, 438479, 438584, H01L 2972

Patent

active

061181528

ABSTRACT:
A silicon layer provided in a silicon substrate through a buried oxide film includes a silicon island partitioned by a trench. A surface of the silicon island in the trench is covered with a side wall oxide film, and LDMOS transistors are formed in the trench. A first impurity-doped polysilicon layer for applying a substrate potential is disposed between the buried oxide film and the substrate, and a second impurity-doped polysilicon layer is buried in the trench to communicate with the first impurity-doped polysilicon layer. Further, electrodes for applying the substrate potential are disposed on the second impurity-doped polysilicon layer. Accordingly, the substrate potential can be readily applied from the surface of the silicon layer.

REFERENCES:
patent: 5434444 (1995-07-01), Nakagawa et al.
patent: 5602551 (1997-02-01), Fukumoto et al.

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