Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1998-05-12

2000-09-12

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, H01L 27108

Patent

active

061181447

ABSTRACT:
In a semiconductor memory having a cylindrical storage electrode which is electrically connected to a semiconductor substrate through a contact hole formed to penetrate through an insulating film formed on the semiconductor substrate, the cylindrical storage electrode has a horizontal fin formed integrally with the cylindrical storage electrode and to extend inwardly from an inner surface of the cylindrical storage electrode to form an annular ring extending along the inner circumference of the cylindrical storage electrode one turn. A dielectric film is formed to cover a surface of the cylindrical storage electrode including the surface of the horizontal fin, and is covered with a plate electrode. Thus, the cylindrical storage electrode has an increased effective surface area even if the area per memory cell is reduced. Accordingly, a necessary storage capacitance can be obtained with an increased integration density.

REFERENCES:
patent: 5796138 (1998-08-01), Chao

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