Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-10-24
1998-05-12
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257536, 257380, H01L 310368
Patent
active
057510504
ABSTRACT:
A base insulator film comprised of a silicon oxide film or the like is formed on the surface of a silicon substrate, and a non-doped polysilicon film (resistor layer) is selectively formed on the base insulator film by thermal CVD. A first silicon oxide film and a BPSG film are sequentially formed on the entire surfaces of the base insulator film and the polysilicon film. Then, two openings which reach the polysilicon film are formed in the BPSG film and the first silicon oxide film, and an impurity is selectively doped into the surface of the polysilicon film through those openings. As a result, a high-resistance section is formed in the polysilicon film between the two openings. Then, the openings are filled with metal layers, and then metal wires to be connected to the metal layers are formed on the surface of the BPSG film. Then, a second silicon oxide film is formed on the entire surfaces of the BPSG film and the metal wires by bias ECR (Electron Cyclotron Resonance)--CVD having a high electric field to coat the metal wires and the like. The high electric field ECR-CVD deposition increases the hydrogen atomic concentration of the polysilicon resistor layer so as to stabilize the resistance against diffusion of lower atomic concentrations of incidental hydrogen atoms from various other interlayer insulating layers.
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patent: 4579600 (1986-04-01), Shah et al.
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patent: 4828629 (1989-05-01), Ikeda et al.
patent: 5087956 (1992-02-01), Ikeda et al.
Hideki Shibta et al, "Time Dependent Resistance Increase in Poly-Si Load Resistor due to Hydrogen Diffusion from Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film in High Density Static Random Access Memories", Jpn. J. Appl. Phys. vol. 33 (1994) pp. 1298-1304, Part 1, No. 3A, Mar. 1994.
Ishikawa Hiraku
Usami Tatsuya
Hardy David B.
NEC Corporation
Thomas Tom
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