Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1996-10-16

1998-05-12

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257352, 257355, 257356, 257359, 257360, H01L 2701, H01L 2362

Patent

active

057510415

ABSTRACT:
In a semiconductor integrated circuit device having an input protection circuit element such as a diode formed in the semiconductor substrate, the leak current is suppressed. An nMOS transistor and a pMOS transistor that constitute a CMOS inverter circuit are formed using a SOI structure. An n-type diffusion layer and p-type diffusion layer are formed within the semiconductor substrate to thereby construct a protective diode that forms an input protection circuit for the CMOS inverter circuit. By surrounding the outer periphery of the n-type diffusion layer with the p-type diffusion layer, the depletion layer that is formed at an interface between the semiconductor substrate and a buried insulation film therein is cut off by the p-type diffusion layer, thereby suppressing the leak current between the n-type diffusion layer and the p-type diffusion layer.

REFERENCES:
patent: 5477407 (1995-12-01), Kobayashi et al.
patent: 5528064 (1996-06-01), Thiel et al.
patent: 5545909 (1996-08-01), Williams et al.
patent: 5567968 (1996-10-01), Tsuruta et al.
patent: 5610426 (1997-03-01), Asai et al.

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