Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-12-08
2000-09-12
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257347, 257348, 257349, 257350, 257351, 257352, 257353, 257751, H01L 2900
Patent
active
061181390
ABSTRACT:
A thin film field effect transistor includes source and drain regions, an active region sandwiched by the source and drain semiconductor regions. A gate insulating film is provided to cover the source and drain regions and the active region, and a semiconductor gate is formed on the gate insulating film above the active region. A gate electrode is formed on the semiconductor gate such that a non-covering portion where the gate electrode does not cover the semiconductor gate is formed.
REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 5739549 (1998-04-01), Takamura et al.
Abraham Fetsum
NEC Corporation
LandOfFree
Thin film transistor with reduced hydrogen passivation process t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor with reduced hydrogen passivation process t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor with reduced hydrogen passivation process t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-98327