Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-01-27
1992-12-22
Wilczewski, Mary
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
437 40, 437101, 437909, 257 9, H01L 21336, H01L 2978, H01L 2712
Patent
active
051737531
ABSTRACT:
A process for manufacturing thin film transistors that have small source-drain areas, small gate-source parasitic capacitance C.sub.gs, and low contact resistance, comprising producing the gate of the transistor on a glass substrate, depositing a gate insulating layer, a thick undoped amorphous silicon layer and a top passivation layer successively on the substrate. The top passivation layer and the thick undoped amorphous silicon layer are then etched until the insulating layer is exposed.
REFERENCES:
patent: 4587720 (1986-05-01), Chenevas-Paule et al.
patent: 4685195 (1987-08-01), Szydlo et al.
patent: 4885616 (1989-12-01), Ohta
patent: 4905066 (1990-02-01), Dohjo et al.
patent: 4928161 (1990-05-01), Kobayashi
patent: 4935792 (1990-06-01), Tanaka et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1-Process Technology, Lattice Press, 1986, pp. 581-582.
Griffith L. Resor, "Lithography for Flat Panel Video Displays", Solid State Technology, 1988, 5 pages.
MRS Technology, Inc. Product Specifications Model 4500S PanelPrinter.TM., 1 page.
Industrial Technology Research Institute
Wilczewski Mary
LandOfFree
Inverted coplanar amorphous silicon thin film transistor which p does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Inverted coplanar amorphous silicon thin film transistor which p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inverted coplanar amorphous silicon thin film transistor which p will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-977409