Nonvolatile memory device using a sense circuit including variab

Details Nonvolatile memory device using a sense circuit including variab Nonvolatile memory device using a sense circuit including variab

Filed on

1989-02-16

Date issued

1990-10-09

Examiner

Popek, Joseph A.

Patent Class

Static information storage and retrieval

SubClass

Read/write circuit

SubSubClass

Including level shift or pull-up circuit

Other Related Categories

365207, 365208, 307530, G11C 700, G11C 1602

Type

Patent

Status

active

Patent number

049624822

Description

ABSTRACT:
A sense circuit incorporated in a semiconductor memory device has a conduction path between a specified non-volatile memory cell and a source of constant voltage level for deciding the logic level of the data bit read out form the memory cell, and the conduction path is divided into a plurality of channels formed in field effect transistors arranged in parallel and different in threshold voltage for improving an access time without sacrifice of a low sensitivity to noises, so that the conduction path is increased in current driving capability, thereby allowing a parasitic capacitance to rapidly be charged up.

REFERENCES:
patent: 4459497 (1984-07-01), Kuo et al.

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