Semiconductor integrated-circuit capacitor having a carbon film

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257741, 257750, H01L 2943, H01L 2992

Patent

active

054401577

ABSTRACT:
A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.

REFERENCES:
patent: 4380803 (1983-04-01), Tuan
patent: 4472726 (1984-09-01), DiMaria et al.
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 5124777 (1992-06-01), Lee
patent: 5206787 (1993-04-01), Fujioka

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