Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-16
1995-08-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257741, 257750, H01L 2943, H01L 2992
Patent
active
054401577
ABSTRACT:
A semiconductor integrated-circuit capacitor comprises a lower electrode formed on a semiconductor substrate, a capacitor insulating film formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. The capacitor insulating film is made of a high-permittivity material, and at least one of the upper and lower electrodes is made of a carbon film or a multilayered film composed of a carbon film and a conductor film other than carbon.
REFERENCES:
patent: 4380803 (1983-04-01), Tuan
patent: 4472726 (1984-09-01), DiMaria et al.
patent: 4897710 (1990-01-01), Suzuki et al.
patent: 5124777 (1992-06-01), Lee
patent: 5206787 (1993-04-01), Fujioka
Aoyama Tomonori
Imai Keitaro
Okano Haruo
Okayama Yasunori
Brown Peter Toby
Kabushiki Kaisha Toshiba
Mintel William
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