Method of monitoring ion-implantation process using photothermal

Details Method of monitoring ion-implantation process using photothermal Method of monitoring ion-implantation process using photothermal

1998-11-03

2000-12-05

Anderson, Bruce C.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324501, 25049221, 2504922, 437 20, 437 7, H01L 2166, G01N 2100, G01R 31308

Patent

active

061571997

ABSTRACT:
A method and apparatus of monitoring an ion-implantation process include a precise analysis for the process conditions of the ion-implantation process by processing the detected signals by using frequency response characteristics of plasma and thermal waves generated by irradiating an ion-implanted surface with a laser beam. The monitoring includes: counting a complex conversion coefficient from the each result value measured for the photo-thermal response by irradiating a laser beam on the sample into which ions are implanted by changing a specific process condition of the ion-implantation process; linearizing a specific parameter of complex conversion coefficient for each value of the complex conversion coefficient according to the changes of the specific process condition; and monitoring a value of the specific process condition of the ion-implantation process based on a detected value of the specific parameter which is linearized according to the changes of the specific process condition.

REFERENCES:
patent: 5185273 (1993-02-01), Jasper
patent: 5228776 (1993-07-01), Smith et al.
patent: 5408327 (1995-04-01), Geiler et al.
patent: 6081127 (2000-06-01), Wagner et al.

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