Non-volatile memory with floating gate type cell transistors and

Details Non-volatile memory with floating gate type cell transistors and Non-volatile memory with floating gate type cell transistors and

1996-09-19

1998-03-17

Dinh, Son T.

Static information storage and retrieval

Floating gate

Particular biasing

36518514, 36518518, 36518519, G11C 1134

Patent

active

057294941

ABSTRACT:
In a non-volatile semiconductor memory device composed of flating gate type memory cells, after the drain or source is charged, it is placed in an electrically floating state and a signal with alternately changing positive and negative potentials is applied to the control gates of the memory cells so as to reduce the charges stored in the floating gates, thereby converging the threshold voltages of the memory cells into a predetermined voltage. Thus, a write/erase operation in the memory device can be carried out surely in a short time.

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