Flash memory cell

Details Flash memory cell Flash memory cell

1998-02-17

2000-12-05

Smith, Matthew

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257329, 257315, 438257, 438286, H01L 29788

Patent

active

061570575

ABSTRACT:
A flash memory cell. A heavily doped region with the opposite polarity of the drain region is formed between the channel region and the drain region. The heavily doped region is in a bar shape extending towards both the drain and the source regions along a side of the floating gate. Furthermore, the reading operation is performed in reverse by applying a zero voltage to the drain region, and a non-zero voltage to the source region.

REFERENCES:
patent: 5270562 (1993-12-01), Wuidart
patent: 5519240 (1996-05-01), Suzuki
patent: 5545906 (1996-08-01), Ogura et al.
patent: 5612914 (1997-03-01), Liu et al.
patent: 5994185 (1999-11-01), Sheu et al.

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