Semiconductor memory device having a long data retention time wi

Details Semiconductor memory device having a long data retention time wi Semiconductor memory device having a long data retention time wi

1998-11-04

2000-12-05

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257309, 257311, 438244, 438241, 438255, H01L 27108, H01L 2976, H01L 2994, H01L 218242

Patent

active

061570559

ABSTRACT:
In a semiconductor memory device such as a DRAM, a conductive film (1.11') is arranged on the rim portion of a isolation insulating film (1.2) in opposition to a semiconductor substrate (1.1) with a thin insulating film in between. This conductive film (1.11') is electrically connected to a lower electrode (1.11) of a storage capacitor. This novel arrangement can control the location of electrical pn junction independently of the location of metallurgical pn junction, thereby realizing a semiconductor memory device having a long data retention time with the increase in leakage current suppressed.

REFERENCES:
patent: 5362663 (1994-11-01), Bronner et al.
patent: 5521115 (1996-05-01), Park et al.
patent: 6066881 (2000-04-01), Shimizu et al.

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