Method for improving characteristic of dielectric material

Details Method for improving characteristic of dielectric material Method for improving characteristic of dielectric material

1999-03-10

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, H01L 2131

Patent

active

061566713

ABSTRACT:
A method for improving a characteristic of a dielectric material. A methylsilsesquioxane having a low dielectric constant is used as a dielectric material. A methylsilsesquioxane film is formed on a substrate. A baking process is performed on the methylsilsesquioxane film, and then a curing process is performed on the methylsilsesquioxane film. Next, a hydrogen plasma treatment is performed on the surface of the methylsilsesquioxane film to prevent the methylsilsesquioxane film from being damaged by oxygen plasma for removing photoresist layer, so that the characteristically low dielectric constant of the methylsilsesquioxane film is maintained.

REFERENCES:
patent: 5273920 (1993-12-01), Kwasnick et al.
patent: 5846859 (1998-12-01), Lee
patent: 5953627 (1999-09-01), Carter et al.
patent: 5958798 (1999-09-01), Shields
patent: 6030901 (2000-02-01), Hopper

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