Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-12-22
1993-10-26
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257346, 257378, H01L 2910, H01L 2702
Patent
active
052568938
ABSTRACT:
An integrated circuit wherein a MOSFET having a low ON resistance is incorporated is disclosed. Specifically, the circuit has a structure wherein a source region and a channel region are formed on one side of a gate electrode of the MOSFET and a drain lead-out region on the other.
Hitachi , Ltd.
Prenty Mark V.
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