Process for forming high temperature stable self-aligned metal s

Details Process for forming high temperature stable self-aligned metal s Process for forming high temperature stable self-aligned metal s

1998-03-04

2000-12-05

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438683, H01L 2144

Patent

active

061566330

ABSTRACT:
A process for forming high temperature stable self-aligned silicide layer that not only establishes itself smoothly and uniformly despite the use of a high temperature in the siliciding reaction, but also can withstand other subsequent high temperature thermal processing operations and maintaining a stable metal silicide layer profile thereafter. Moreover, desired thickness and uniformity of the metal silicide layer can be obtained by suitably adjusting the amorphous implant parameters, while the use of a titanium nitride cap layer help to stabilize the metal silicide layer during high temperature formation and that a stable and uniform metal silicide layer profile can be ensured even if subsequent high temperature processing operations are performed.

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