Compact SOI body contact link

Details Compact SOI body contact link Compact SOI body contact link

1998-09-03

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438149, H01L 2100

Patent

active

06156589&

ABSTRACT:
A method and structure for a silicon on insulator (SOI) device with a body contact are provided. The body contact is formed by epitaxial growth from a substrate to the body region of the device. The body contact is self-aligned with the gate of the device and is buried within an isolation region outside of the active area of the device. Thus, the body contact does not increase parasitic capacitance in the device, not does the body contact affect device density. No additional metal wiring or contact holes are required.

REFERENCES:
patent: 5587604 (1996-12-01), Machesney et al.
patent: 5691230 (1997-11-01), Forbes
patent: 5909618 (1999-05-01), Forbes et al.
patent: 5930605 (1999-07-01), Mistry et al.
patent: 6020239 (2000-01-01), Gambino et al.

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