Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-10-23
1998-03-17
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438609, 438626, 438627, 438631, 438688, 438687, 438686, 438685, 427241, 427226, 427229, 4274191, 4274192, B05D 302, B05D 512, H01L 21445
Patent
active
057286264
ABSTRACT:
A method of planarizing a non-planar substrate, such as filling vias and contact holes, spreads a suspension of a conducting material suspended in a liquid on a substrate. The suspension includes an organometallic material, preferably with particles of a polymerized tin or indium alkoxide. The material is spread by spinning the substrate after applying the suspension. The carrier liquid and organic groups are removed by baking and curing at elevated temperatures, thereby depositing the conductive material on the substrate in a layer which is more planar than the substrate and which has regions of greater and lesser thickness. A relatively brief etch step removes conductive material from regions of lesser thickness, leaving material filling vias or contact holes.
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Allman Derryl D. J.
Lee Steven S.
AT&T Global Information Solutions Company
Bailey Wayne P.
Bowers Jr. Charles L.
Hyundai Electronics America
Swartz Douglas W.
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