Method for producing contact holes

Details Method for producing contact holes Method for producing contact holes

1996-09-03

1998-03-17

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438197, 438297, H01L 2100

Patent

active

057286094

ABSTRACT:
A method for producing contact holes in MOS integrated circuits by the SOI technique, with an oxide layer and a silicon layer above it, includes producing raised contact hole regions on an initially relatively thick silicon layer with a first mask in a first method step. A LOCOS insulation which is made with a second mask in a second method step is effected solely in a region that was thinned in the first method step.

REFERENCES:
patent: 4753896 (1988-06-01), Matloubian
patent: 5492857 (1996-02-01), Reedy et al.

Affiliated with

Also associated with

Rating

Method for producing contact holes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing contact holes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing contact holes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-957174