Method for implanting semiconductor conductive layers

Details Method for implanting semiconductor conductive layers Method for implanting semiconductor conductive layers

1998-10-08

2000-09-12

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 438633, H01L 2144

Patent

active

061177709

ABSTRACT:
A method for implanting copper conductive layers in channel or via openings with alloying elements, such as magnesium, boron, tin, and zirconium. The implantation is performed after conductive layer chemical-mechanical-polishing (CMP) using a surface barrier layer as an implant barrier. With the surface barrier layer being removed by barrier layer CMP, this allows directed, heavy implantation of the conductive layer with the alloying elements.

REFERENCES:
patent: 5843840 (1998-12-01), Miyazaki et al.

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