Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1997-05-30

1999-06-01

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257903, H01L 2976, H01L 2994

Patent

active

059090472

ABSTRACT:
A semiconductor memory device capable of high-speed operation, low-voltage operation, and low power-consumption. First and second driver transistors are laid out in such a way that the channel regions of first and second driver transistors extend in a direction oblique to first and second word lines. First and second transfer transistors are laid out in such a way that the channel regions of the first and second transfer transistors extend in a direction perpendicular to the first and second word lines. The channel regions of the first and second transfer transistors and the contact resistance of the first and second bit contacts are substantially constant independent of an allowable overlay error, respectively, thereby keeping the capability of the first and second transfer transistors and the bit contact resistance the same independent of the allowable overlay error.

REFERENCES:
IDEM Technical Digest, 1991, pp. 481-484, "16 Mbit SRAM Cell Technologies for 2.0 v. Operation".

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