Semicondcutor device with high speed field effect transistor str

Details Semicondcutor device with high speed field effect transistor str Semicondcutor device with high speed field effect transistor str

1993-01-28

1994-08-16

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257332, 257344, 257653, H01L 2978

Patent

active

053389581

ABSTRACT:
A semiconductor device includes a MISFET which has a gate polysilicon between source and drain regions, the gate polysilicon being covered with a gate insulator film. The gate polysilicon with the gate insulator film thereon has a protruded curved bottom portion extending in the substrate direction. The source and drain regions have their respective bottom surfaces located above the location where the bottom of the gate insulator film is most protruded toward the substrate. At least the drain region has in the vicinity of the protruded bottom portion of the gate polysilicon, a sidewall portion having a bottom portion projecting laterally towards the protruded portion of the gate polysilicon and an upper portion bent into a concave shape to form a pocket between that upper portion and the gate insulator film.

REFERENCES:
patent: 4680603 (1987-07-01), Wei et al.

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