Electrically erasable and programmable read only memory having a

Details Electrically erasable and programmable read only memory having a Electrically erasable and programmable read only memory having a

1992-04-03

1994-08-16

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257 67, 257408, 365185, H01L 2968, G11C 1140

Patent

active

053389565

ABSTRACT:
The present invention is intended to relax restrictions on threshold voltage for a nonvolatile storage device, such as a flash EEPROM and to enable a nonvolatile storage device to be constructed in a higher degree of integration. A plurality of nonvolatile memory cells (4) having floating gates (14) and control gates (17) formed over the floating gates (14) are connected in series through source-drain regions (22) between the data output terminal and the reference voltage terminal of data lines (38, 39). Channel forming regions (33) are formed on a gate insulating film (31) formed over the control gates (17) . The source-drain regions 34 of thin-film transistors are connected to the opposite sides of the channel forming regions (33) and the source-drain regions (22) , respectively.

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patent: 4996669 (1991-02-01), Endoh et al.
patent: 5191551 (1993-03-01), Inoue
Sze, S. M. "Semiconductor Devices -Physics and Technology" c. 1985 by Bell Telephone Lab Inc., p. 490.

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