Contactless real-time in-situ monitoring of a chemical etching p

Details Contactless real-time in-situ monitoring of a chemical etching p Contactless real-time in-situ monitoring of a chemical etching p

1992-12-04

1994-08-16

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

2041292, G01N 2746, C25F 302

Patent

active

053383907

ABSTRACT:
A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, said at least two electrodes being proximate to but not in contact with the at least one wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

REFERENCES:
patent: 2933675 (1960-04-01), Hoelzle
patent: 4497699 (1985-02-01), de Wit et al.
patent: 4793895 (1988-12-01), Kaanta et al.
patent: 4995939 (1991-02-01), Ferenczi et al.
patent: 5081421 (1992-01-01), Miller et al.
"Resistance/Capacitance Methods for Determining Oxide Etch End Point" by C. Liu and H. Sauer, IBM Technical Disclosure Bulletin, FI873-0490, vol. 16, No. 8, Jan. 1974.
"Capacitive Etch Rate Monitor for Dielectric Etching" by W. Goubau, IBM Technical Disclosure Bulletin, SA886-0341, vol. 31, No. 1, Jun. 1988.
"Establishing End Point During Delineation Process" by J. Hoekstra, IBM Technical Disclosure Bulletin, YO872-0303, vol. 16, No. 6, Nov. 1973.
"An In-Situ Etch Rate Monitor Controller" by E. Bassous and T. Ning, IBM Technical Disclosure Bulletin, YO377-0116, vol. 20, No. 3, Aug. 1977.

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