Process for selectively etching silicon

Details Process for selectively etching silicon Process for selectively etching silicon

1982-05-25

1983-12-27

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 156662, 156345, 204192EC, 204192E, 204298, 252 791, 427 38, 427 93, H01L 21306, B44C 122, B05D 512, C03C 1500

Patent

active

044228970

ABSTRACT:
A process is provided for selectively etching silicon by means of a plasma etching composition wherein an etching target is connected to a radio frequency voltage and a source of silicon and oxygen is provided with the plasma etching composition in order to minimize etching of a masking composition.

REFERENCES:
patent: 4333793 (1982-06-01), Lifshitz et al.

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