Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Patent
1995-06-06
1997-01-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
257203, 257208, 257209, 257365, 324523, 324527, 324765, 324769, H01L 2358
Patent
active
055980090
ABSTRACT:
An improved transistor design and methods of construction and testing for same. The novel transistor design method includes the steps of providing a transistor with multiple common gate areas; connecting each gate area to a pad; and adjusting the ratio of the area of the pad to the total of the gate areas to provide a predetermined ratio. The ratio may be adjusted by adjusting the size of the gate, in a single gate implementation, or adjusting the number of gates in a multiple gate configuration. The novel transistor includes a substrate, at least one source disposed on the substrate; at least one drain disposed on the substrate; and at least one gate disposed on the substrate between the source and the drain. The gate has a first layer of at least partially conductive material of area A.sub.g connected to a pad of area A.sub.p. In accordance with the present teachings, the antenna ratio R of the area of the pad A.sub.p to the area of the gate A.sub.g is a predetermined number. In practice, the ratio R would be chosen to be a minimum so that deleterious plasma currents attracted to the gate area would be reduced. In a particular implementation, the transistor includes plural gates each having a layer of at least partially conductive material of area A.sub.gn where n is any integer between 1 and N and where N is the total number of gates. In this case, the plural gates are interconnected and the ratio R is a predetermined number equal to A.sub.p /A.sub.gtotal, where A.sub.gtotal is the sum of the areas A.sub.gn and n is any integer between 1 and N. The novel method for testing multiple gate transistors includes the steps of connecting a first terminal of each of said transistors to a ground; interconnecting a second terminal of each transistor and applying a first source of supply potential; and selectively applying a second source of supply potential to a third terminal of a selected transistor.
REFERENCES:
patent: 4075653 (1978-02-01), Howard
patent: 5250835 (1993-10-01), Izawa
Advanced Micro Devices , Inc.
Mintel William
LandOfFree
Hot carrier injection test structure and testing technique for s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Hot carrier injection test structure and testing technique for s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hot carrier injection test structure and testing technique for s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-942850