DRAM cell with a rugged stacked trench (RST) capacitor

Details DRAM cell with a rugged stacked trench (RST) capacitor DRAM cell with a rugged stacked trench (RST) capacitor

1997-10-31

2000-02-01

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257301, 257304, 257311, 438255, H01L 27108

Patent

active

060206098

ABSTRACT:
The trench capacitors formed in a semiconductor wafer include trenches formed in said semiconductor substrate, first storage nodes includes doped ion regions and doped polysilicon structures, the doped regions are formed in a surface of the trenches. The doped polysilicon structures are formed on the walls of the trenches. An isolation structure is formed on said substrate between said trenches for isolation. A dielectric layer substantially covers the first storage nodes. A field plate is formed on the isolation structure and Second storage nodes is formed in the trenches and on the dielectric layer.

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